Method of manufacturing a halftone phase shift mask

Details Method of manufacturing a halftone phase shift mask Method of manufacturing a halftone phase shift mask

1996-07-12

1999-03-30

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

058886745

ABSTRACT:
A halftone phase shift mask includes a substrate, a first light-shielding layer formed in one region of the substrate for shielding light between a plurality of key patterns, and a second light-shielding layer formed in another region of the substrate for shielding light between a plurality of cell patterns, whereby a generation of sidelobe is prevented. A method of manufacturing a phase shift mask includes forming a first light-shielding layer on one region of a substrate, forming a second light-shielding layer on another region of the substrate and on the first light-shielding layer, and patterning the first and second light-shielding layers to thereby form a plurality of cell patterns and key patterns.

REFERENCES:
patent: 5536602 (1996-07-01), Nakao
patent: 5591550 (1997-01-01), Choi et al.
Yong K. Choi et al., Advanced Process Technology Department, LG Semicon Co., Optical Proximity Correction on Attenuated Phase Shifting Photo Mask for Dense Contact Array, pp. 328-332 and 334-338/SPIE vol. 2440 Feb. 1995.

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