Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1984-07-10
1986-10-28
Ozaki, George T.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 148186, 148189, 29569L, 156616R, H01L 21368, H01L 21383, H01L 21388
Patent
active
046197184
ABSTRACT:
A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI element. Thus, the concentration of vacancies and other defects acting as donor is reduced as compared with the concentration of the p type impurity to be introduced. This invention is suitable for producing light-emitting diodes emitting a light of short-wave lengths.
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patent: 4465527 (1984-08-01), Nishizawa
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Jun-ichi Nishizawa et al., Effects of Vapor Pressure on GaP LED's Japanese Journal of Applied Physics, vol. 17 (1978), Supplement 17-1, pp. 87-92.
Washiyama et al., Electronic Materials EFM-78-12, The Institute of Electrical Engineers of Japan, Tokyo, Japan, Nov. 29, 1978, pp. 1-9.
Nishizawa et al., Journal of Crystal Growth, vol. 31 (1975), pp. 215-222.
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