Method of manufacturing a glass passivation semiconductor device

Details Method of manufacturing a glass passivation semiconductor device Method of manufacturing a glass passivation semiconductor device

1982-04-30

1984-10-09

Lusignan, Michael R.

Coating processes

Electrical product produced

Welding electrode

156657, 156662, 427 93, 4271262, 427380, B05D 306, B05D 512, B44C 122, C03C 1500

Patent

active

044761546

ABSTRACT:
A method of manufacturing a glass passivation semiconductor device by depositing a glass passivation layer on the surface of a semiconductor junction formed on a semiconductor substrate. First laser beams which can be substantially absorbed in the glass protective material and second laser beams which can be absorbed in the semiconductor substrate are simultaneously irradiated on those portions of the semiconductor substrate on which the glass protective material is deposited, thereby providing a glass passivation layer.

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