Method of manufacturing a gate turn-off thyristor

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148 335, 148187, 29571, 357 38, H01L 21225

Patent

active

041705025

ABSTRACT:
This disclosure sets forth a method of manufacturing a gate turn-off (GTO) thyristor which includes the step of altering the lateral electrical resistance of one base region by out diffusion from selected portions of the base region.

REFERENCES:
patent: 3436809 (1969-04-01), Peacock
patent: 3484309 (1969-12-01), Gilbert
patent: 3909321 (1975-09-01), Roberts

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