Method of manufacturing a gallium phosphide red-emitting device

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148172, H01L 700

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039516997

ABSTRACT:
A method of manufacturing a gallium phosphide (GaP) red-emitting device by forming at least one n-type GaP layer on an n-type GaP substrate by the liquid phase epitaxial growth process and further depositing a p-type GaP layer on said n-type GaP layer, thereby providing a p-n junction contributing to emission of light, characterized in that the method comprises reducing the surface donor concentration of the n-type GaP layer to below 1 .times. 10.sup.18 cm.sup.-.sup.3 ; and epitaxially growing at least the light emitting region of the p-type GaP layer by cooling a solution for epitaxial growth of said p-type GaP layer at a slower rate than 5.degree.C per minute.

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