Method of manufacturing a gallium phosphide light-emitting devic

Details Method of manufacturing a gallium phosphide light-emitting devic Method of manufacturing a gallium phosphide light-emitting devic

1974-08-16

1976-04-20

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, 148 15, 252 623GA, 156624, H01L 738

Patent

active

039517004

ABSTRACT:
A method of manufacturing a gallium phosphide light-emitting device which characteristically comprises the step of growing a gallium phosphide layer of one conductivity type on a gallium phosphide substrate of the opposite conductivity type at a growth initiating temperature of 650.degree. to 850.degree.C by the liquid phase epitaxy process to provide a p-n junction contributing to emission of light.

REFERENCES:
patent: 3462320 (1969-08-01), Lynch et al.
patent: 3603833 (1971-09-01), Logan et al.
patent: 3715245 (1973-02-01), Barnett et al.
patent: 3759759 (1973-09-01), Solomon
patent: 3854447 (1974-12-01), Kobayashi

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