Method of manufacturing a gallium nitride semiconductor...

Details Method of manufacturing a gallium nitride semiconductor... Method of manufacturing a gallium nitride semiconductor...

2004-07-16

2009-10-13

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE33028

Reexamination Certificate

active

07601553

ABSTRACT:
The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semi-conductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon thermal decomposition generates a radical being combined with a hydrogen radical to eliminate the hydrogen radical, thereby eliminates the need for a subsequent annealing process for removing hydrogen and prevents the active layer from being thermally damaged due to the subsequent annealing process.

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