Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Patent
1997-01-09
1998-10-27
Tsai, Jey
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
438601, 148DIG55, H01L 2182
Patent
active
058277595
ABSTRACT:
A programmable fuse element disposed between integrated circuit elements that may be selectively joined during the manufacture or programming of an integrated circuit. The fuse element is a normally open fuse that electrically isolates the integrated circuit elements. The fuse element is comprised of a central area of conductive material insulated from the integrated circuit elements by areas of dielectric material. The integrated circuit elements and the fuse element are disposed on a thin oxide layer covering a semiconductor substrate to prevent those elements from shorting to the semiconductor substrate or to each other via the semiconductor substrate. A protective dielectric layer may be deposited over both the fuse element and the integrated circuit elements during the manufacture of the overall integrated circuit. A laser beam is used to burn through the protective layer and melts both the conductive material and the dielectric material that form the fuse element. As the fuse element melts, the conductive material contacts the integrated circuit elements thereby electrically coupling the integrated circuit elements together creating a low-resistance path.
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Braden Stanton C.
Siemens Microelectronics, Inc.
Tsai Jey
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