Method of manufacturing a flash memory device

Details Method of manufacturing a flash memory device Method of manufacturing a flash memory device

2007-10-16

2007-10-16

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

C438S238000, C438S745000, C257SE21008, C257S017000, C257S229000, C257S645000, C257S659000

Reexamination Certificate

active

11301866

ABSTRACT:
A method of manufacturing a flash memory device wherein a stacked structure of an oxide and nitride or the reverse is applied to insulation spacers provided on sidewalls of gates for forming source/drain regions. After completing the source/drain regions, spacers are formed on sidewalls of the gates by using an oxide film as a contacting buffer, thus minimizing the interference between gates and reducing the stress to cells, overcoming the disturbance of threshold voltage.

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Official action issued in corresponding Korean application No. 2005-37105 dated Jun. 26, 2006.

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