Method of manufacturing a flash EEPROM cell

Details Method of manufacturing a flash EEPROM cell Method of manufacturing a flash EEPROM cell

1997-02-11

1998-01-06

Niebling, John

Fishing, trapping, and vermin destroying

437 52, H01L 21265, H01L 218247

Patent

active

057054169

ABSTRACT:
This invention discloses a method of manufacturing a flash EEPROM cell having a split gate structure in which source and drain regions are formed by self align method without using of an additional mask. Problems caused by that length of control gates in each cell are different from each other due to the misalignment between a mask for forming the control gate and a mask for forming source and drain regions are solved since source and drain regions are formed by self align method without using of an additional mask.

REFERENCES:
patent: 5512503 (1996-04-01), Hong et al.
patent: 5589413 (1996-12-01), Sung et al.

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