Method of manufacturing a field effect transistor having an...

Details Method of manufacturing a field effect transistor having an... Method of manufacturing a field effect transistor having an...

2011-06-28

2011-06-28

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S149000, C257SE21046

Reexamination Certificate

active

07968368

ABSTRACT:
A method of manufacturing a field effect transistor, which has high alignment accuracy between a gate electrode and source and drain electrodes and can provide a transparent device at a low cost. Since a patterned light blocking film is formed on the rear side of a substrate and used as a photomask for forming a gate electrode pattern and a source and drain electrode pattern on the front side of the substrate, the number of photomasks is reduced, and self-alignment between the gate electrode and the source and drain electrodes is carried out, thereby improving the alignment accuracy of these electrodes. Thereby, a method of manufacturing a high-accuracy low-cost field effect transistor can be provided.

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