Method of manufacturing a field effect transistor

Details Method of manufacturing a field effect transistor Method of manufacturing a field effect transistor

1999-10-19

2000-11-21

Smith, Matthew

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438570, 438571, 438257, H01L 2128, H01L 2144, H01L 21336

Patent

active

061502456

ABSTRACT:
On a channel layer, there are disposed a gate electrode and a first contact layer of which a side surface is brought into contact with the gate electrode on the source side and of which a side surface is apart from the gate electrode on the drain side. Provided on the first contact layer is a second contact layer on which ohmic source and drain electrodes are arranged. A connection wiring is disposed on an upper end of the gate electrode. Specifically, there are provided a thin contact layer and a thick contact layer such that the thin contact layer is brought into contact with the gate electrode. Therefore, the problems of the contact resistance of the ohmic electrode and the gate parasitic capacitance are removed and both drawbacks can be improved at the same time.

REFERENCES:
patent: 4743565 (1988-05-01), Goth et al.
patent: 5599738 (1997-02-01), Hashemi et al.
patent: 6027972 (2000-02-01), Kerber

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