Method of manufacturing a field effect transistor

Details Method of manufacturing a field effect transistor Method of manufacturing a field effect transistor

1977-08-18

1979-06-12

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 204 15, 204 56R, B01J 1700

Patent

active

041576101

ABSTRACT:
The exposed surface of a semi-insulating compound semiconductor substrate is anodized while light is irradiated to the exposed surface to form a gate insulating film on the substrate between source and drain regions.

REFERENCES:
patent: 3345274 (1967-10-01), Schmidt
patent: 3775262 (1973-11-01), Heyerdahl
patent: 3929589 (1975-12-01), Ermanis
"Semiconductors", by Goudet & Meuleau, 1957, p. 86.

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