Method of manufacturing a FET device disposed in a compound s/c

Details Method of manufacturing a FET device disposed in a compound s/c Method of manufacturing a FET device disposed in a compound s/c

1980-06-23

1982-05-04

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148187, 357 22, 357 61, 357 91, H01L 2126, H01L 2978, H01L 29205, H01L 2714

Patent

active

043274757

ABSTRACT:
A method of manufacturing a field effect transistor uses a semiinsulating substrate consisting of a compound semiconductor, and an N type semiconductor layer formed on the substrate. The method comprises the steps of implanting ions of a P type impurity from the main surface of said semiconductor layer to form at least two P type gate regions which extend from the main surface to substantially reach said substrate and are disposed with a predetermined interval, and sintering metallic layers on the gate regions in ohmic contact and on opposite sides of the semiconductor layers with said semiconductor gate regions being interposed therebetween to form a gate, a source and a drain electrodes. Said implantation step further comprises a step of positioning at least two of said gate regions such that said gate regions come in contact with the boundary region of the transistor to be constructed.
The method of manufacturing the field effect transistor is useful for fabricating the field effect transistor at a high yield which is suitable to assemble an integrated circuit.

REFERENCES:
patent: 3836993 (1974-09-01), Joshi
patent: 4033788 (1977-07-01), Hunsperger et al.
patent: 4257057 (1981-03-01), Cheung et al.
Lechti, I.E.E.E. Trans., vol. MTT-24, (1976) 279-300.
Welch et al., Joun. Appl. Phys. 45 (1974) 3685.
Hunsperger et al., Solid St. Electronics, 18 (1975) 349.

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