Etching a substrate: processes – Forming or treating electrical conductor article
Patent
1993-12-02
1995-08-22
Chaudhuri, Olik
Etching a substrate: processes
Forming or treating electrical conductor article
156646, 1566591, 437 52, 437 60, 437919, 437228, 216 46, 216 67, 216 48, B44C 122, H01L 2170
Patent
active
054436885
ABSTRACT:
A method of patterning a film of PZT material comprises the steps of providing a mask over a selected surface portion of the PZT material; and, plasma etching unmasked portions of the thin film material. The method includes the steps of: introducing a gas mixture of halogenated gases into a chamber; ionizing the gas mixture into a plasma in the chamber by imposition of an electric field across the introduced gaseous mixture, chemically reacting the ionized gaseous mixture, chemically reacting the unmasked portions of the lead zirconate titanate thin film material to selectively remove such exposed portion of the thin film material. The gas mixture is a mixture of a chloride and a compound of fluorine. Preferably the compound of fluorine is a halocarbon or fluorocarbon. In particular, the fluorocarbon is a trifluoromethane, CHF.sub.3, and the chloride is boron trichloride BCl.sub.3.
REFERENCES:
patent: 4760437 (1988-07-01), Denkar et al.
patent: 4946240 (1990-08-01), Yamamoto et al.
patent: 5116643 (1992-05-01), Miller et al.
patent: 5122923 (1993-06-01), Matsuhara
patent: 5229309 (1993-07-01), Kato
patent: 5254217 (1993-10-01), Mantar
patent: 5271797 (1993-12-01), Kanisawa
patent: 5275695 (1994-01-01), Chang
patent: 5292445 (1994-03-01), Fjare et al.
patent: 5310990 (1994-05-01), Russell et al.
patent: 5350705 (1994-09-01), Brassington et al.
Poor et al., Measurement of etch rate and film stoichiometry variations during plasma etching of PLZT thin film, J. Appl. Phys. 70(6) Sep. 15, 1991 pp. 3385-3387.
Title et al. Reactive ion beam etching of PLZT electrooptic substrates with repeated self-aligned Masking applied optics/vol. 25, No. 9, May 1st 1986.
Collins Steven R.
LeBlanc Bruce W.
Toure Abron S.
Chaudhuri Olik
Mofford Donald F.
Raytheon Company
Tsai H. Jey
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