Method of manufacturing a ferroelectric device

Details Method of manufacturing a ferroelectric device Method of manufacturing a ferroelectric device

1996-11-07

1998-12-08

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01G 706, H01L 218239

Patent

active

058468471

ABSTRACT:
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) is manufactured from a substrate (11) that has a layer (14) of ferroelectric material sandwiched between a substrate (13) and a layer (16) of silicon. A gate structure (24) is formed on the layer (16) of silicon. A source region is formed in a portion of the layer (16) of silicon adjacent one side of the gate structure (24) and a drain region is formed in a portion of the layer (16) of silicon adjacent an opposing side of the gate structure (24).

REFERENCES:
patent: 5373176 (1994-12-01), Nakamura
patent: 5466629 (1995-11-01), Mihara et al.
patent: 5478653 (1995-12-01), Guenzer
patent: 5524092 (1996-06-01), Park
patent: 5585300 (1996-12-01), Summerfelt

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