Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2006-02-14
2006-02-14
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S396000
Reexamination Certificate
active
06998323
ABSTRACT:
It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelecticity. A silicon oxide layer2,a lower electrode12,a ferroelectric layer8and an upper electrode10are formed on a silicon substrate2.The lower electrode12is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode12can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer8.So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer8.
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Duy Mai Anh
Hamre Schumann Mueller & Larson P.C.
Rohm & Co., Ltd.
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