Etching a substrate: processes – Forming or treating material useful in a capacitor
Reexamination Certificate
2005-02-08
2005-02-08
Vinh, Lan (Department: 1765)
Etching a substrate: processes
Forming or treating material useful in a capacitor
C216S074000, C438S240000, C438S255000
Reexamination Certificate
active
06852240
ABSTRACT:
A ferroelectric capacitor configuration is configured with at least two different coercitive voltages. A first electrode structure having a surface which forms at least two levels is firstly produced. A layer of ferroelectric material of varying thickness is deposited over the first electrode by spin coating. A second electrode structure is subsequently formed on the layer of ferroelectric material.
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Hartner Walter
Kasko Igor
Schindler Günther
Weinrich Volker
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