Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-11-27
2007-11-27
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000
Reexamination Certificate
active
11125916
ABSTRACT:
Provided is a method of manufacturing a capacitor in a semiconductor device, comprising the steps of: forming a first metal film of noble series for the bottom electrode; forming a ferroelectric film on the first metal film; conducting a first thermal process on the resultant structure where the ferroelectric film is formed; conducting an ion implantation process on the resultant structure passing through the first thermal process; conducting a second thermal process on the resultant structure passing through the ion implantation process; forming a second metal layer of noble series for the top electrode on the ferroelectric film in the resultant structure passing through the first thermal process; and conducting a third thermal process on the resultant structure.
REFERENCES:
patent: 5043049 (1991-08-01), Takenaka
patent: 5728603 (1998-03-01), Emesh et al.
patent: 6555428 (2003-04-01), Jung
patent: 100436054 (2004-06-01), None
Chen Jack
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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