Semiconductor device manufacturing: process – Forming schottky junction
Reexamination Certificate
2011-03-08
2011-03-08
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Forming schottky junction
C438S573000, C438S575000, C438S580000, C438S581000, C438S583000, C257SE21047, C257SE21359, C257SE21368
Reexamination Certificate
active
07902055
ABSTRACT:
An embodiment of the invention is a Schottky diode22having a semiconductor substrate3, a first metal24, a barrier layer26, and second metal28. Another embodiment of the invention is a method of manufacturing a Schottky diode22that includes providing a semiconductor substrate3, forming a barrier layer26over the semiconductor substrate3, forming a first metal layer23over the semiconductor substrate3, annealing the semiconductor substrate3to form areas24of reacted first metal and areas23of un-reacted first metal, and removing selected areas23of the un-reacted first metal. The method further includes forming a second metal layer30over the semiconductor substrate3and annealing the semiconductor substrate3to form areas28of reacted second metal and areas30of un-reacted second metal.
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Bailey Fredric D.
Chuang Ming-Yeh
Dumin Jennifer S.
Irwin Richard B.
Jones Patrick J.
Brady III Wade J.
Keagy Rose Alyssa
Landau Matthew C
Malek Maliheh
Telecky , Jr. Frederick J.
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