Method of manufacturing a DRAM cell

Details Method of manufacturing a DRAM cell Method of manufacturing a DRAM cell

1993-06-24

1994-07-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170

Patent

active

053326857

ABSTRACT:
Disclosed is a novel DRAM manufacturing method to reduce difficulties due to the high aspect ratio of contact hole for storage electrode. The method comprises the steps of formation of a contact plug on contact areas of bit line and storage electrode at the same time and then, formation of a bit line that is in contact with the contact plug for bit line and finally, making a storage electrode that is as high as the bit line contact with the contact plug for storage electrode.

REFERENCES:
patent: 5219780 (1993-06-01), Jun
patent: 5229314 (1993-07-01), Okudaira et al.

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