Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2006-06-27
2006-06-27
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Packaging or treatment of packaged semiconductor
C438S030000, C438S106000, C438S113000, C438S455000, C438S458000, C438S460000
Reexamination Certificate
active
07067338
ABSTRACT:
ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).
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Elfrink Rene Johan Gerrit
Johnson Mark Thomas
Lifka Herbert
Roozeboom Freddy
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