Method of manufacturing a crown shaped capacitor with horizontal

Details Method of manufacturing a crown shaped capacitor with horizontal Method of manufacturing a crown shaped capacitor with horizontal

1996-03-29

1997-08-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

H01L 2170

Patent

active

056565364

ABSTRACT:
The present invention is a method of manufacturing crown shape capacitors for use in semiconductor memories. High etching selectivity between BPSG (borophososilicate glass) and CVD-oxide (chemical vapor deposition oxide) is used to fabricate a tooth like structure within a crown shaped capacitor. Utilizing the structure as a mold, the present invention can form the crown shape structure with horizontal fins to increase the surface area of the capacitor.

REFERENCES:
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5436186 (1995-07-01), Hsue et al.
patent: 5447878 (1995-09-01), Park et al.
patent: 5460999 (1995-10-01), Hong et al.
patent: 5486488 (1996-01-01), Kamiyama
patent: 5532182 (1996-07-01), Woo
patent: 5543346 (1996-08-01), Keum et al.

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