Method of manufacturing a compound semiconductor thin film for a

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

136260, 136264, 136265, 136244, 427 74, 427226, 4272552, 437102, 437234, H01L 3118

Patent

active

057143919

ABSTRACT:
This invention relates to a manufacturing method of a compound semiconductor thin film derived from a metal sulfide produced by thermal decomposition of a sulfur-containing metal organic compound, the compound containing at least one functional group having at least one metal atom selected from the group consisting of copper, zinc, cadmium, mercury, and lead, and the functional group also containing at least one sulfur atom. Since the obtained metal sulfides are of high-purity and dense, they can be utilized in various photoelectric devices. Particularly, the photoelectric conversion efficiency of a CdS/CdTe system thin film compound semiconductor solar cell can be improved remarkably by employing a layer made of a CdS thin film as a window of the solar cell.

REFERENCES:
patent: 4360542 (1982-11-01), Loeffler et al.
patent: 4611091 (1986-09-01), Choudary et al.
patent: 4734381 (1988-03-01), Mitchell
patent: 4975299 (1990-12-01), Mir et al.
patent: 5304499 (1994-04-01), Bonnet et al.
patent: 5393675 (1995-02-01), Compaan
Pande et al., "Electrophoretically Deposited CdTe Films and CdS-CdTe Devices", 13th European Photovoltaic Solar Energy Conference and Exhibition; Nice, France, Oct. 23, 1995-Oct. 27, 1995.
Kessler et al., "Characterization of High Vacuum Evaporated CdTe/CdS Layers and Solar Cells", 13th European Photovoltaic Solar Energy Conference and Exhibition; Nice, France Oct. 23, 1995-Oct. 27, 1995.
Chu et al., "Recent Progress in Thin-film Cadmium Telluride Solar Cells", Progress in Photovoltaics: Research and Applications, vol. 1, pp. 31-42 (1993).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a compound semiconductor thin film for a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a compound semiconductor thin film for a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a compound semiconductor thin film for a will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-661742

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.