Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-05-17
2005-05-17
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S046000, C438S779000, C438S783000, C438S796000
Reexamination Certificate
active
06893894
ABSTRACT:
A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.
REFERENCES:
patent: 5232790 (1993-08-01), Arimune et al.
patent: 5518826 (1996-05-01), Kudoh et al.
patent: 6071587 (2000-06-01), Yoshinari et al.
patent: 6636477 (2003-10-01), Miyamoto et al.
patent: 20020054564 (2002-05-01), Koizumi et al.
J.H. Kim et al, “Nanoelectronic Devices With Reactively Fabricated Semiconductor”, Applied Physics Letters, vol. 80, No. 15, pp 2764-2766 (2002), Apr. 15, 2002, American Institute of Physics.
Kim Joo-Ho
Tominaga Junji
Malsawma Lex H.
National Institute of Advanced Industrial Science and Technology
Samsung Japan Corporation
Smith Matthew
LandOfFree
Method of manufacturing a compound semiconductor by heating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a compound semiconductor by heating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a compound semiconductor by heating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3412012