Method of manufacturing a compactor in a semiconductor memory de

Fishing – trapping – and vermin destroying

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437 47, 437 60, 437919, H01L 2170, H01L 2700

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active

054478790

ABSTRACT:
A method of manufacturing a semiconductor memory device is disclosed. A gate region which is used as a word line is formed on a semiconductor substrate and then a TFT is formed on the gate region. Accordingly, the word line is isolated to a bit line and a charge storage electrode, respectively.

REFERENCES:
patent: 4412375 (1983-11-01), Matthews
patent: 5158905 (1992-10-01), Ahn
patent: 5173753 (1992-12-01), Wu et al.
patent: 5219779 (1993-06-01), Suzuki
patent: 5250828 (1993-10-01), Honma

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