Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1978-04-19
1979-08-14
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2518, H01J 902
Patent
active
041640594
ABSTRACT:
A focusing shadow mask incorporating an electrostatic lens at each mask aperture is produced by creating an electrode comprising a set of parallel conductors on one surface of an insulator sheet and a second electrode on the other surface. The second electrode has apertures defined either by a second set of parallel conductors that are perpendicular to the first set or by a conductive grid that includes conductors parallel to the first set and other conductors perpendicular to the first set. Additional metal can be built up on either electrode to strengthen the combined structure. After formation of both electrodes, the areas of the insulating material are selectively etched away to form apertures for beams to pass through.
REFERENCES:
patent: 3186883 (1965-06-01), Frantzen
patent: 3586900 (1971-06-01), Seki et al.
patent: 3680184 (1972-08-01), Greene
patent: 3688359 (1972-09-01), Oikawa et al.
patent: 3787106 (1974-01-01), Schermerhorn
patent: 3799816 (1974-03-01), Schneble, Jr. et al.
patent: 3999263 (1976-12-01), Marshall et al.
Lazarus Richard B.
Tamoshunas Algy
U.S. Philips Corporation
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