Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Patent
1998-11-05
2000-08-01
Nelms, David
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
438 59, H01L 2100
Patent
active
060965738
ABSTRACT:
A method is described for manufacturing a CMOS sensor. The method comprises the steps of providing a substrate the steps having a first conductive type, and then forming an oxide layer and a reflection layer on the substrate in sequence. The reflection layer and the oxide layer are patterned to define a sensor region, and a conductive layer having a second conductive type is formed on the reflection layer and the substrate. Thereafter, a doped region having the first conductive type is formed in a portion of the conductive layer by performing an ion implantation step. An isolation structure is formed on portions of the conductive layer adjacent to the doped region, and then a gate is formed on the doped region. Next, a lightly doped drain region having the second conductive type is formed in portions of the doped region adjacent to the gate, and a well having the second conductive type is formed in the doped region above the reflection layer, and then a spacer is formed on the sidewall of the gate. An ion implantation step is performed to form a source/drain region and a sensor region having the second conductive type at each side of the gate in portions of the doped region, and then a dielectric layer is formed over the substrate.
REFERENCES:
patent: 5913120 (1999-06-01), Cappelletti
patent: 6027955 (2000-02-01), Lee et al.
Le Dung A.
Nelms David
United Microelectronics Corp.
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