Method of manufacturing a charge transfer device

Details Method of manufacturing a charge transfer device Method of manufacturing a charge transfer device

1977-08-02

1979-01-09

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 357 24, B01J 1700

Patent

active

041330994

ABSTRACT:
A method of manufacturing charge transfer devices in which an asymmetrical potential well in the direction of charge transfer is formed by the shape of narrower portions of a transfer channel which is bordered by highly doped channel stoppers. Impurities are diffused through a first mask into a polycrystalline silicon layer on the surface of a semiconductor substrate to construct transfer electrodes of highly doped polycrystalline layer. Then impurities are diffused into a semiconductor substrate through openings bordering on one edge with a first mask to form the highly doped portions to make the narrower portions of the transfer channel to assure that the edges of the transfer electrode and the edge of the narrower portion are aligned.

REFERENCES:
patent: 3936860 (1976-03-01), Hill
patent: 3967365 (1976-07-01), Friedrich
patent: 3996658 (1976-12-01), Takei
patent: 4057895 (1977-11-01), Ghezzo

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