Method of manufacturing a charge transfer device

Details Method of manufacturing a charge transfer device Method of manufacturing a charge transfer device

1997-03-28

1998-11-03

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438144, H01L 2100, H01L 21339

Patent

active

058307788

ABSTRACT:
In a charge transfer device including single-layer charge transfer electrodes including a p-type polycrystalline silicon layer and an n-type polycrystalline silicon layer, the sizes of the charge accumulation and potential barrier regions can be set to desired values and the height of potential barrier is produced with a desired reproducibility.
A polycrystalline silicon layer is fabricated on a surface of a semiconductor substrate. With a photoresist layer 106 as a mask, ions of phosphorus are implanted thereinto so as to form a silicon oxide layer by liquid phase growth. Boron ions are then injected thereinto. The junction region between the n-type and p-type polycrystalline silicon layers is etched for the separation of the charge transfer electrodes.

REFERENCES:
patent: 5442207 (1995-08-01), Jeong
patent: 5646427 (1997-07-01), Smith et al.
Homma et al., "Fully Planarized Multilevel Interconnection using Selective SiO.sup.2 Deposition", NEC Research & Develop., vol. 32, No. 3, pp. 315-321, Jul. 1991.

Affiliated with

Also associated with

Rating

Method of manufacturing a charge transfer device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a charge transfer device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a charge transfer device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-688645