Method of manufacturing a charge-coupled device

Details Method of manufacturing a charge-coupled device Method of manufacturing a charge-coupled device

1987-12-11

1988-08-23

Ozaki, George T.

Fishing, trapping, and vermin destroying

437186, 437229, H01L 2190

Patent

active

047660899

ABSTRACT:
A semiconductor device is set forth comprising a number of parallel first electrodes (1) which are located on an insulating layer and are mutually separated by grooves with insulated walls, in which second electrodes (2) coplanar with the first electrodes (1) are provided. According to the invention, the first electrodes (1) are covered by an insulating layer provided with first contact windows (7), which each overlap at least one second electrode (2). The second electrodes (2) are provided with self-aligned second contact windows (8). Each second electrode (2) exhibits between its second contact window (8) and the first contact windows (7) overlapping the second electrode and also between said first contact windows (7), at least one interruption (9).

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patent: 4163239 (1979-07-01), Carter
patent: 4227202 (1980-10-01), Tasch, Jr. et al.
patent: 4228445 (1980-10-01), Tasch, Jr. et al.
patent: 4574468 (1986-03-01), Slotboom et al.
patent: 4619039 (1986-10-01), Maas et al.

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