Method of manufacturing a CCD solid state image sensing device

Details Method of manufacturing a CCD solid state image sensing device Method of manufacturing a CCD solid state image sensing device

1992-09-23

1994-02-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437 50, H01L 2170

Patent

active

052886565

ABSTRACT:
In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

REFERENCES:
patent: 4947224 (1990-08-01), Kuroda et al.
patent: 4992392 (1991-02-01), Nichols et al.
patent: 5084749 (1992-01-01), Losee
patent: 5181093 (1993-01-01), Kawaura

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