Method of manufacturing a capacitor in a semiconductor device

Details Method of manufacturing a capacitor in a semiconductor device Method of manufacturing a capacitor in a semiconductor device

2001-05-10

2002-04-02

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S240000

Reexamination Certificate

active

06365487

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates generally to a method of manufacturing a capacitor in a semiconductor device. More particularly, the invention relates to a method of manufacturing a capacitor in a semiconductor device, which can obtain a high capacitance and a low leakage current in a capacitor using a Ta
2
O
5
film as a dielectric film, in such a way that a first Ru film used as a lower electrode is deposited by an LPCVD method, a mixture plasma process of Ar and H
2
is performed, and then a second Ru film is deposited by an LPCVD method to improve the surface roughness of the Ru film.
2. Description of the Prior Art
As a semiconductor device is highly integrated, in order to secure the capacitance of a capacitor using a Ta
2
O
5
film having a conventional MIS (metal-insulator-silicon) structure as a dielectric film, the thickness of the Ta
2
O
5
film is reduced. This method, however, causes increases in the leakage current. In order to solve this problem, a method in which a metal layer is used as a lower electrode to lower the effective thickness and to secure a capacitance and the characteristic of a leakage current, has been attempted. If a metal layer is used as the lower electrode, the characteristic of a leakage current can be improved due to the thin quality of the lower electrode.
For example, in order to form the Ru film as the lower electrode, an LPCVD method is employed. If the Ru film is formed by an LPCVD method, as the surface roughness is poor, some of the Ru film is deposited as the seed layer by a PVD method, and the Ru film is then deposited by the LPCVD method, thus improving the surface roughness. In this case, however, the process is complicated and the step coverage is adversely affected.
SUMMARY OF THE INVENTION
A method of manufacturing a capacitor in a semiconductor device includes the steps of depositing a first Ru film on a semiconductor substrate in which a given structure is formed; processing the first Ru film by exciting a mixture plasma of Ar and H
2
; depositing a second Ru film on the first Ru film to form a second deposited Ru film, then patterning the second deposited Ru film to form a lower electrode; forming a Ta
2
O
5
film on the entire structure; and forming a TiN film on the entire structure and then patterning the TiN film to form an upper electrode.


REFERENCES:
patent: 5637533 (1997-06-01), Choi
patent: 5702970 (1997-12-01), Choi
patent: 5879957 (1999-03-01), Joo
patent: 6207557 (2001-03-01), Lee et al.
patent: 6326259 (2001-12-01), Kim et al.

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