Method of manufacturing a capacitor deep trench and of...

Details Method of manufacturing a capacitor deep trench and of... Method of manufacturing a capacitor deep trench and of...

2006-01-03

2008-03-18

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C438S700000, C257SE21229, C257SE21246, C257SE21267, C257SE21304, C257SE21545, C257SE21655

Reexamination Certificate

active

07344954

ABSTRACT:
A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.

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