Method of manufacturing a buried plate type DRAM having a widene

Details Method of manufacturing a buried plate type DRAM having a widene Method of manufacturing a buried plate type DRAM having a widene

1995-07-24

1997-05-13

Tsai, Jey

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438390, H01L 2170, H01L 2700

Patent

active

056292260

ABSTRACT:
A trench of a buried plate type DRAM has a bottom portion wider than an opening portion. A silicon oxide film is formed on an upper portion of the side wall of the trench. An N-type impurity diffusion region is formed around the bottom portion of the trench. Impurity diffusion regions of adjacent trenches are integrally connected with each other as one portion. A first polycrystalline silicon layer is formed on the impurity diffusion region in the trench and the silicon oxide film. The polycrystalline silicon layer is coated with a laminated film consisting of a silicon nitride film and a silicon oxide film. The trench is filled with a second polycrystalline silicon layer covering the laminated film. The impurity diffusion region serves as a plate diffusion region of a capacitor, the first polycrystalline silicon layer serves as a plate electrode, the laminated film serves as a capacitor insulating film, and the second polycrystalline silicon layer serves as a storage node electrode. The capacitor is formed in the trench.

REFERENCES:
patent: 4763179 (1988-08-01), Tsubouchi et al.
patent: 4969022 (1990-11-01), Nishimoto et al.
patent: 5079615 (1992-01-01), Yamazaki
patent: 5112771 (1992-05-01), Ishii et al.
patent: 5432365 (1995-07-01), Chin et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a buried plate type DRAM having a widene does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a buried plate type DRAM having a widene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a buried plate type DRAM having a widene will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1384867