Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Patent
1998-01-27
1999-06-29
Picardat, Kevin M.
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
438455, 438612, H01L 2130, H01L 2146
Patent
active
059181397
ABSTRACT:
A method of manufacturing a bonding substrate is disclosed. An oxide film is formed on the surface of at least one of two semiconductor substrates, and the two substrates are brought into close contact with each other via the oxide film. The substrates are heat-treated in an oxidizing atmosphere in order to firmly join the substrates together. Subsequently, an unjoined portion at the periphery of a device-fabricating substrate is completely removed, and the thickness of the device-fabricating substrate is reduced to a desired thickness so as to yield a thin film. The surface of the thin film is then etched through vapor-phase etching in order to make the thickness of the thin film uniform. In the method, the oxide film on the unjoined portion of at least the support substrate is removed before the surface of the thin film is subjected to vapor-phase etching. The method prevents a groove from being formed in the surface of the unjoined portion (terrace portion) of the support substrate (base wafer) even when the surface of the thin film undergoes vapor phase etching.
REFERENCES:
patent: 5403777 (1995-04-01), Bryant et al.
patent: 5665631 (1997-09-01), Lee et al.
patent: 5668045 (1997-09-01), Golland et al.
patent: 5693567 (1997-12-01), Weisfield et al.
Mitani Kiyoshi
Yoshizawa Katsuo
Collins Deven
Picardat Kevin M.
Shin Etsu Handotai Co., Ltd.
LandOfFree
Method of manufacturing a bonding substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a bonding substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a bonding substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1386468