Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-05-24
2005-05-24
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S464000, C438S977000, C257SE21568, C414S935000, C414S937000, C414S941000
Reexamination Certificate
active
06897124
ABSTRACT:
A bonded wafer27and a residual wafer28are placed in a state of being superimposed on each other on a susceptor20disposed in a heat treatment10. A Bernoulli chuck1is moved to a wafer holding position60on a susceptor20by driving an arm56, sucks the bonded wafer27positioned on the upper side and then moves to a bonded wafer recovery table50′ to recover the bonded wafer there. Then, similarly, the Bernoulli chuck1suction holds the residual wafer28at the wafer holding position60and then moves to a residual wafer recovery table50″ to recover the residual wafer there. With such a construction adopted, in a method for manufacturing a bonded wafer according to a so-called smart-cut method, not only is the separated bonded wafer recovered suppressing occurrence of a defect, deficiency and contamination, but there is also provided a method for manufacturing a bonded wafer capable of automation suitable for mass production.
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Aga Hiroji
Tate Naoto
Fourson George
Pham Thanh V.
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
Snider & Associates
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