Method of manufacturing a bismuth-substituted rare earth iron ga

Details Method of manufacturing a bismuth-substituted rare earth iron ga Method of manufacturing a bismuth-substituted rare earth iron ga

1996-06-17

1997-11-04

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 58, 117 59, C30B 1904

Patent

active

056835060

ABSTRACT:
A method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film used for short wavelengths, includes the steps of: manufacturing a BIG-grown substrate in an LPE furnace by the LPE method, the BIG-grown substrate having a bismuth-substituted rare-earth iron garnet single crystal film grown on one surface of a non-magnetic garnet single crystal substrate, the film having a thickness in the range of 20-100 .mu.m; spinning the BIG-grown substrate at a high speed to remove a melt adhering thereto prior to taking the BIG-grown substrate out of the LPE furnace; and cooling the BIG-grown substrate to 300.degree. C. within one minute.

REFERENCES:
patent: 4082424 (1978-04-01), Sauter et al.
patent: 4148556 (1979-04-01), Sauter et al.
patent: 5512193 (1996-04-01), Shirai et al.
patent: 5535046 (1996-07-01), Shirai et al.
patent: 5565131 (1996-10-01), Shirai et al.

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