Method of manufacturing a bismuth-substituted rare-earth iron ga

Details Method of manufacturing a bismuth-substituted rare-earth iron ga Method of manufacturing a bismuth-substituted rare-earth iron ga

1999-03-08

2000-05-09

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 54, 117 55, 252 6256, 252 6257, 252 6263, C30B 1902

Patent

active

060598786

ABSTRACT:
A method is used when manufacturing a bismuth-substituted rare-earth iron garnet single crystal (BIG) film by the LPE method. The BIG film is grown on one side of a non-magnetic garnet substrate using a melt that contains flux components and rare-earth oxides. An amount of calcium is added to the melt such that a difference between optical absorption coefficients of the film at a wavelength of 0.78 .mu.m before and after subjecting the film to hydrogen-reduction treatment ranges from 660 to 1430 dB/cm. The film is grown on a non-magnetic garnet substrate having a thickness in the range of 400-600 .mu.m, at a crystal growth temperature of the melt to form a film-substrate structure. The film-substrate structure has a curvature ranging from +0.3 to +0.7 m.sup.-1 at room temperature. The film-substrate structure is subjected to the hydrogen reduction at a temperature ranging from 320 to 400.degree. C. in a hydrogen atmosphere, so that the curvature of the film-substrate structure decreases to a value ranging from -0.1 to +0.1 m.sup.-1.

REFERENCES:
patent: 5535046 (1996-07-01), Shirai et al.
patent: 5565131 (1996-10-01), Shirai et al.
patent: 5683506 (1997-11-01), Shirai et al.
patent: 5965287 (1999-10-01), Suzuki et al.

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