Method of manufacturing a bipolar transistor by using only two m

Details Method of manufacturing a bipolar transistor by using only two m Method of manufacturing a bipolar transistor by using only two m

1997-02-28

1999-10-26

Bowers, Charles

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438202, 438203, 438365, 438370, H01L 21331, H01L 218238, H01L 218222

Patent

active

059727667

ABSTRACT:
A method of manufacturing a transistor capable of obtaining a BICMOS while making the difference in the number of manufacturing processes from a CMOS smaller, includes the steps of: separating an element region in a semiconductor substrate; forming a emitter opening for deciding upon an emitter layer in an insulating film on the semiconductor substrate, forming a polysilicon film on the insulating film and in the emitter opening; implanting selectively impurity ions into the semiconductor substrate through the polysilicon film and the insulating film to form: a collector layer and a base layer; and performing heat treatment for activating impurities in the base layer and the collector layer and diffusing impurities into the semiconductor substrate from the polysilicon film to form an emitter diffused layer.

REFERENCES:
patent: 4498227 (1985-02-01), Howell et al.
patent: 5516718 (1996-05-01), Lee
patent: 5571731 (1996-11-01), Grutzediek et al.
patent: 5648279 (1997-07-01), Imai
patent: 5866462 (1999-02-01), Tsai et al.
Havemann, Robert H. and Robert H. Eklund. "Process Integration Issues for Submicron BiCMOS Technology," Solid State Technology, Jun. 1992, p. 71-76.
R.H. Havemann et al., "Subjects related to Process Integration for Submicron BICMOS Technique", solid state technology, Japanese edition Aug. 1992, pp. 13-19.

Affiliated with

Also associated with

Rating

Method of manufacturing a bipolar transistor by using only two m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a bipolar transistor by using only two m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a bipolar transistor by using only two m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-763524