Method of manufacturing a bipolar transistor and bipolar...

Details Method of manufacturing a bipolar transistor and bipolar... Method of manufacturing a bipolar transistor and bipolar...

2006-06-15

2008-10-28

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S350000, C438S369000, C257S565000, C257SE21350, C257SE21372, C257SE29044, C257SE29124

Reexamination Certificate

active

07442616

ABSTRACT:
A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154) over the base electrode layer; (c) forming a mask layer (280) over a first portion of the base electrode layer, a portion of the first portion of the emitter electrode and a portion of the semiconductor substrate; and (d) implanting a dopant into a second portion of the base electrode layer after forming the emitter electrode after forming the mask layer.

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