Method of manufacturing a bipolar transistor

Details Method of manufacturing a bipolar transistor Method of manufacturing a bipolar transistor

1989-04-26

1991-08-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437909, 437 67, 437 72, 437186, 437162, 148DIG11, 148DIG124, 148DIG10, H01L 21331

Patent

active

050396242

ABSTRACT:
A bipolar transistor having an intrinsic base portion for forming emitter-base PN junction with an emitter region and an extrinsic base portion for connecting a base electrode is disclosed. A concavity is formed between the intrinsic and extrinsic base portions, and the intrinsic base portion is electrically connected to the base electrode through a passage formed under the concavity and through the extrinsic base portion. The emitter region is contacted at its side to an insulating film formed in the concavity.

REFERENCES:
patent: 4319932 (1982-03-01), Jambotkar
patent: 4381953 (1983-05-01), Ho et al.
patent: 4545114 (1985-10-01), Ito et al.
patent: 4640721 (1987-02-01), Uehara et al.
patent: 4641416 (1987-02-01), Iranmanesh et al.
patent: 4782030 (1988-11-01), Katsumata et al.
patent: 4800171 (1989-01-01), Iranmanesh et al.
Shinsuke Konaka, Yousuke Yamamoto and Tetsushi Sakai, IEEE Transaction on Electron Devices, vol. ED-33, No. 4, Apr. 1986.

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