Fishing – trapping – and vermin destroying
Patent
1987-03-05
1988-10-18
Ozaki, George T.
Fishing, trapping, and vermin destroying
437151, 437191, H01L 21385, H01L 21425
Patent
active
047787724
ABSTRACT:
A method of manufacturing a semiconductor device by forming an N type collector layer in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorous and arsenic. Arsenic or antimony or the like, which are N type impurity material of which the energy of combination with vacancies is great are diffused in the P type base layer.
REFERENCES:
patent: 3607449 (1971-09-01), Tokuyama et al.
patent: 3704178 (1972-11-01), Hill
patent: 3756873 (1973-09-01), Kaiser
patent: 3812519 (1974-05-01), Nakamura et al.
patent: 3834953 (1974-09-01), Nakamura et al.
patent: 4006046 (1977-02-01), Pravin
patent: 4226650 (1980-10-01), Takahashi et al.
patent: 4263067 (1981-04-01), Takahashi et al.
patent: 4667218 (1987-05-01), Takahashi et al.
Ishida Hidekuni
Takahashi Kouichi
Yonezawa Toshio
Kabushiki Kaisha Toshiba
Ozaki George T.
LandOfFree
Method of manufacturing a bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a bipolar transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1194908