Method of manufacturing a bipolar transistor

Details Method of manufacturing a bipolar transistor Method of manufacturing a bipolar transistor

1993-02-01

1995-03-21

Powell, William

Fishing, trapping, and vermin destroying

437 33, 437909, 437162, 148DIG9, 148DIG11, H01L 21265

Patent

active

053995090

ABSTRACT:
A semiconductor device and method to reduce the size of bipolar transistors and decrease the number of steps required to fabricate the bipolar transistor by using a unitary contiguous oxide sidewall to separate a collector contact from the base, emitter and emitter contact. The device and method may also be used during the fabrication of BiCMOS devices.

REFERENCES:
patent: 4274909 (1981-06-01), Venkataraman et al.
patent: 4333227 (1982-06-01), Horng et al.
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4641416 (1987-02-01), Iranmanesh et al.
patent: 4745087 (1988-05-01), Iranmanesh
patent: 4800171 (1989-01-01), Iranmanesh et al.
patent: 4926233 (1990-05-01), Hutter
patent: 4929570 (1990-05-01), Howell
patent: 4933733 (1990-06-01), Iranmanesh et al.
patent: 4957875 (1990-09-01), Akbar et al.
patent: 5064772 (1991-11-01), Jambotka
patent: 5139966 (1992-08-01), Jerome et al.
patent: 5219784 (1993-06-01), Solheim

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