Method of manufacturing a back contact for semiconductor die

Details Method of manufacturing a back contact for semiconductor die Method of manufacturing a back contact for semiconductor die

1993-10-15

1995-09-19

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437247, 148DIG20, H01L 21441

Patent

active

054515440

ABSTRACT:
The back contact of a silicon die consists of a pure aluminum contact, alloyed into the back surface of the silicon. The back surface need not be subjected to a grinding operation. The aluminum is deposited by an E-beam deposition process. The aluminum is alloyed into the silicon at a temperature lower than the melting point of pure aluminum, but higher than the melting point of a silicon-aluminum eutectic. Aluminum, nickel and silver are thereafter E-beam deposited, in sequence, on the aluminum surface and are sintered.

REFERENCES:
patent: 4965173 (1990-10-01), Gould
patent: 5010040 (1991-04-01), Vayman
Wolf, "Silicon Processing for the VLSI Era, vol. 2: Process Integration", 1990, pp. 110-111.

Affiliated with

Also associated with

Rating

Method of manufacturing a back contact for semiconductor die does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a back contact for semiconductor die, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a back contact for semiconductor die will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1827941