Method of manufacture of zener diodes

Details Method of manufacture of zener diodes Method of manufacture of zener diodes

1978-02-02

1979-02-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 148189, H01L 21223

Patent

active

041382803

ABSTRACT:
A method of manufacture of a zener diode with a given breakdown voltage is disclosed wherein the resistivity of the initial wafer is measured before diffusion of a junction in the wafer, and a diffusion operation is then performed to diffuse the junction at a fixed diffusion temperature and for a time which is determined such that the desired breakdown voltage is proportional to the product of the square root of the initial resistivity and the fourth root of the diffusion time.

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patent: 2827436 (1958-03-01), Bernski
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patent: 3340598 (1967-09-01), Hatcher
patent: 3349474 (1967-10-01), Rauscher
patent: 3453154 (1969-07-01), Wycislak
patent: 3602778 (1971-08-01), Ura et al.
patent: 3635773 (1972-01-01), Thire
patent: 3878001 (1975-04-01), Olk
patent: 3933527 (1976-01-01), Tarneja et al.
patent: 4013483 (1977-03-01), Nuzillat et al.
patent: 4046608 (1977-09-01), Iseghem et al.

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