Method of manufacture of semiconductor memory device with multip

Details Method of manufacture of semiconductor memory device with multip Method of manufacture of semiconductor memory device with multip

1994-11-28

1996-01-02

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 45, H01L 21265

Patent

active

054808227

ABSTRACT:
In accordance with this invention, a method of manufacture of a semiconductor memory device comprises the following steps: forming field oxide structures on a semiconductor substrate, forming a gate oxide layer on exposed surfaces of the substrate, forming a first word line layer on the device, patterning the first word line layer by forming a first patterned mask mask with a first set of openings therein and etching the first word line layer through the openings in the first mask to form conductor lines, forming a first dielectric layer on the surface of the first word line layer on the device, forming a second word line layer on the first dielectric layer, patterning the second word line layer by forming a second patterning mask with a second set of openings therein and etching portions of the second word line layer therethrough, h)forming a second dielectric layer on the surface of the second word line layer on the device, and implanting ions of dopant into predetermined locations into the semiconductor substrate of the device, the dopant being of sufficient concentration to form a doped region therein.

REFERENCES:
patent: 5204542 (1993-04-01), Namaki et al.
patent: 5270240 (1993-12-01), Lee
patent: 5306657 (1994-04-01), Yang
patent: 5306935 (1994-04-01), Esquivel et al.

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