Method of manufacture of semiconductor device and conductive...

Compositions – Electrically conductive or emissive compositions – Free metal containing

Reexamination Certificate

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Details

C106S001190, C136S256000, C427S096100

Reexamination Certificate

active

07906045

ABSTRACT:
The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

REFERENCES:
patent: 4051074 (1977-09-01), Asada
patent: 4256513 (1981-03-01), Yoshida et al.
patent: 4737197 (1988-04-01), Nagahara et al.
patent: 5645765 (1997-07-01), Asada et al.
patent: 7435361 (2008-10-01), Carroll et al.
patent: 7462304 (2008-12-01), Wang et al.
patent: 2003/0108664 (2003-06-01), Kodas et al.
patent: 2004/0155227 (2004-08-01), Bechtloff et al.
patent: 2006/0231801 (2006-10-01), Carroll et al.
patent: 2006/0231804 (2006-10-01), Wang et al.
patent: 2008/0210912 (2008-09-01), Mears
patent: 1465209 (2004-06-01), None
patent: 11-330512 (1999-11-01), None
patent: 2001-015782 (2001-01-01), None
patent: 2001-127317 (2001-05-01), None
patent: 2001-313400 (2001-11-01), None
patent: 2003-223813 (2003-08-01), None
patent: 2004-146521 (2004-05-01), None

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