Method of manufacture of high speed, high power bipolar transist

Details Method of manufacture of high speed, high power bipolar transist Method of manufacture of high speed, high power bipolar transist

1982-01-15

1983-11-22

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, H01L 2122

Patent

active

044167083

ABSTRACT:
A high speed, high power bipolar transistor has a planar emitter structure having a central area and outer peripheral areas. The doping concentration in the central area is reduced as compared to that of the outer areas to reduce the injection efficiency at the central area of the emitter region. A low doped region of conductivity type opposite to that of the emitter surrounds the emitter area and can fully deplete to spread out the field to permit high voltage breakdown for the device. A novel process of manufacture is used wherein the doping concentration across the emitter area is controlled by diffusing the emitter through a pattern of elongated or rectangular or other cross-section masking islands which have closer spacing in the center of the emitter region to produce a lower average doping concentration in the center of the emitter than in the outer peripheral regions of the emitter.

REFERENCES:
patent: 3807038 (1974-04-01), Watari et al.
patent: 3839104 (1974-10-01), Yuan
patent: 3976512 (1976-08-01), De Nora et al.
patent: 4115797 (1978-09-01), Hingarh et al.
patent: 4263066 (1981-04-01), Kolmann
patent: 4293868 (1981-10-01), Iizuka et al.

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