Method of manufacture of galluim arsenide field effect transisto

Details Method of manufacture of galluim arsenide field effect transisto Method of manufacture of galluim arsenide field effect transisto

1985-03-11

1989-02-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437912, H01L 21306, H01L 2124, H01L 21265

Patent

active

048046353

ABSTRACT:
A self-aligned gate structure for a compound semiconductor MESFET is formed rom a lower silicon layer and an upper metal, e.g. nickel, region. The nickel region forms an etch mask for the silicon and subsequently an implantation mask for the drain and source regions. Etching of the silicon provides an undercut whereby the gate separation from the drain and source is defined. Heating the structure to anneal the implant diffuses the metal into the silicon to form a compound silicide gate structure.

REFERENCES:
patent: 3617824 (1971-11-01), Shinoda et al.
patent: 4109372 (1978-08-01), Geffken
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4425700 (1984-01-01), Sasaki et al.
patent: 4458410 (1984-07-01), Sugaki et al.
patent: 4546540 (1985-10-01), Ueyanagi et al.

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